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    2023

  • 04

    Undertook the National Semiconductor Standards Work Conference

  • 2022

  • 12

    The Famous and high-quality high-tech products in Guangdong province

  • 12

    Prepared the world's highest resistive semi-insulating GaN free-standing substrate using ethylene jointly with Peking University and Poland National High Voltage Laboratory.

  • 05

    Collaborative multiplier enterprise.

  • 2021

  • 12

    Mass-produced GaN free-standing substrates with low dislocation density (4E5 to 7E5 cm-2) .

  • 01

    Successfully broke through the technology of N-face Ohm contact and Ga-face Schottky contact, and obtainded GaN on GaN Schottky diodes.

  • 2020

    2019

  • 03

    National Intellectual Property Advantage Enterprise in 2019.

  • 2018

  • 12

    The project "Large mismatch heteroepitaxial technology for nitride semiconductors", jointly completed by Beijing university and sinopatt/sinonitride group, won the second prize of the National Technology Invention Award .

  • 03

    March 2018,a group of visitors headed by Huang Shaowen, a member of the Standing Committee of the Municipal Party Committee of Dongguan visited Sino Nitride Semiconductor Co., Ltd and conducted researches in the company.

  • 01

    January 2018,a group of visitors headed by Ye Baohua and Liu Jintang, the director and deputy director of Dongguan Economy and Information Technology Bureau visited Sino Nitride Semiconductor Co., Ltd. Accompanied by Yuan Liqun, the secretary of the Party committee of Qishi Town and Xiong Shiquan, the mayor of Qishi Town, the visitors conducted researches in the company.

  • 2017

  • 11

    November 2017,Sino Nitride Semiconductor Co., Ltd was awarded the “Outstanding Contribution Prize” for the year of 2017 issued by the National Technological Committee for Standardization of Semiconductor Equipment and Material.

  • 11

    November 2017,the National Standards “GaN Laser Lift-Off(LLO) Equipment” and the “Hydride vapor phase epitaxy apparatus for preparing nitride semiconductor material” mainly drafted by Sino Nitride Semiconductor Co., Ltd were approved by the committee members and submitted to higher authority for approval.

  • 10

    October 2017,Sino Nitride Semiconductor Co., Ltd achieved major breakthrough in GaN single crystal substrate.

  • 09

    September 2017,Sino Nitride Semiconductor Co., Ltd was specified as “2017 Semiconductor Materials and Devices Engineering Technology Research Center in Guangdong province”.

  • 08

    August 2017,Sino Nitride Semiconductor Co., Ltd was included in the key enterprises of intellectual property protection in Dongguan.

  • 04

    April 2017,Sino Nitride Semiconductor Co., Ltd was awarded the title of “Top 30 Enterprises of LED Technological Innovation in China”.

  • 2016

  • 09

    September 2016,the ceremony of unveiling the nameplate of the South Base of China’s third generation of semiconductor industry which was established with the participation of Sino Nitride Semiconductor Co., Ltd was witnessed by Cao Jianlin, the former deputy minister of the Ministry of Science and Technology and the chairman of National Decision Committee of Third Generation of Semiconductor Industry, and Yuan Baocheng, the deputy stadholder of Guangdong province.

  • 07

    July 2016,the project of Sino Nitride Semiconductor Co., Ltd “Key Technology of Patterned Sapphire Substrate for Semiconductor Lighting and Its Industrialization” was awarded the “Second Prize for Scientific and Technological Progress of Dongguan”.

  • 07

    July 2016,Zhang Guoyi, the general manager of Sino Nitride Semiconductor Co., Ltd was awarded the prize of “Honorary Mayor Award---Enterprise Technical Leader”.

  • 03

    March 2016,a group of visitors headed by Bai Tao, a member of the Standing Committee of the Municipal Party Committee and the head of the Organization Department of Municipal Party Committee visited Sino Nitride Semiconductor Co., Ltd. Accompanied by Chen Fukun, the chairman of People’s Congress of the town and relevant personnel from party and government administration office and organization office, the group conducted researches in the company.

  • 01

    January 2016,Sino Nitride Semiconductor Co., Ltd was specified as “2015 Guangdong Innovative Enterprises (Experimental unit) by the High-Tech Enterprises Association of Guangdong.

  • 01

    January 2016,Gan Zizhao, the honorary chairman of board of directors of Sino Nitride Semiconductor Co., Ltd and Academician of Chinese Academy of Sciences was awarded the “Honorary Citizen of Dongguan".

  • 2015

  • 10

    October 2015,Sino Nitride Semiconductor Co., Ltd was specified as the “International Technological Cooperation Base of the Nation” by the Ministry of Science and Technology.

  • 10

    October 2015,Sino Nitride Semiconductor Co., Ltd was awarded the title of “Model Enterprise of Intellectual Property of Guangdong Province” by the Intellectual Property Office of Guangdong Province.

  • 04

    April 2015,Liu Peng, an employee of the Department of HVPE Equipment Research and Development was awarded the honorary title of “National Model Worker” and was granted a meeting with the leaders of the party and the country.

  • 2014

  • 04

    April 24th and 25th 2014,Sino Nitride Semiconductor Co., Ltd hosted the seminar of 5 National Standards including “Laser Lift-Off(LLO) Equipment” and etc.

  • 03

    March 23rd 2014,Hu Chunhua, the secretary of Provincial Party Committee paid a visit to Sino Nitride Semiconductor Co., Ltd, a subsidiary company of Guangda Group, and conducted special researches.

  • 2013

  • 12

    December 4th 2013,the National Standards mainly drafted by Sino Nitride Semiconductor Co., Ltd was approved.

  • 07

    July 18th 2013,the “San Zhong” projects construction inspection team headed by Zhang Ke, the deputy mayor of Dongguan visited Sino Nitride Semiconductor Co., Ltd and conducted inspection.

  • 04

    April 2013,Sino Nitride Semiconductor Co., Ltd was awarded the title “The Most Promising Innovative Enterprise” by The Economic Daily.

  • 01

    January 2013,the patterned sapphire substrate (PSS) and GaN/sapphire composite substrate of Sino Nitride Semiconductor Co., Ltd were acknowledged as key new products of Guangdong.

  • 01

    January 2013,Sino Nitride Semiconductor Co., Ltd was awarded the title of “2012 Advanced Enterprise of Association for Science and Technology System of Dongguan”.

  • 2012

  • 12

    In the second half of 2012,Sino Nitride Semiconductor Co., Ltd participated in the preparatory work of optical component of Guangdong province organized by the Department of Science and Technology of Guangdong Province.

  • 11

    November 1st 2012,in the Dongguan international science and technology cooperation week, Sino Nitride Semiconductor Co., Ltd, the Dongguan Institute of Opto-Electronics Peking University and the Ferdinand-Braun-Institute Germany signed cooperation agreement; the three parties will cooperate in the field of semiconductor laser unit.

  • 10

    October 17th 2012,the national inspection team and welcoming and accompanying personnel from the provincial, municipal and town authorities headed by Guo Xiangyuan, a member of Party group of the Ministry of Science and Technology and leader of the discipline inspection group of the Central Commission for Discipline Inspection stationed at the Ministry of Science and Technology visited Sino Nitride Semiconductor Co., Ltd and inspected the implementation of the national science and technology plans project undertaken by Sino Nitride Semiconductor Co., Ltd and gave instructions.

  • 2011

  • 10

    October 2011,approved by the Department of Science and Technology of Guangdong Province, the Guangdong Academicians Workstation was established at Sino Nitride Semiconductor Co., Ltd.

  • 05

    May 2011,Sino Nitride Semiconductor Co., Ltd, completed the phase two of the production expansion of patterned sapphire substrate(PSS) production line; the company was developing toward large-scale enterprise production.

  • 2010

  • 12

    December 2010,the Beijing R&D center of Sino Nitride Semiconductor Co., Ltd was officially established in Changping Campus of Peking University (Beijing Yanyuan Sino Nitride Semiconductor Engineering Research Center).

  • 12

    December 2010,the first Laser Lift-Off(LLO) equipment was exported to the USA successfully and gained excellent appraisal.

  • 11

    November 2010,Sino Nitride Semiconductor Co., Ltd was specified as Guangdong international Scientific Research Cooperation Base by the Department of Science and Technology of Guangdong Province.

  • 10

    October 2010,Post-Doctoral scientific research workstation was established with the approval of the Ministry of Human Resources and Social Security of the People’s Republic of China.

  • 08

    August 2010,Sino Nitride Semiconductor Co., Ltd Training school was established in conjunction with the Research Center for Wide Bandgap Semiconductor of PKU for the purpose of training internal employees.

  • 06

    June 2010,Huang Huahua, the former stadholder of Guangdong province visited Sino Nitride Semiconductor Co., Ltd and listened to the work report given by innovative scientific research team. High appraisal was given to the company.

  • 06

    June 2010,the first innovative scientific research team of Research Center for Wide Bandgap Semiconductor of PKU headed by Gan Zizhao Academician was introduced to Sino Nitride Semiconductor Co., Ltd.

  • 05

    May 2010,the first GaN substrate production line was established to start the industrialization of domestic GaN substrate.

  • 2009

  • 12

    December 2009,the first production line of patterned sapphire substrate(PSS) was established and started to operate.

  • 05

    May 2009,the first product of Sino Nitride Semiconductor Co., Ltd, Micro Area Laser Lift-Off(LLO) Equipment, was launched; this also represented the birth of the first Pure Solid Micro Area Laser Lift-Off(LLO) Equipment in the world.

  • 04

    April 2009,Sino Nitride Semiconductor Co., Ltd was awarded the title of “Dongguan Private Science and Technology Enterprise”. In the same month, Sino Nitride Semiconductor Co., Ltd took over 4 national invention patents from Peking University and officially started to own proprietary intellectual property rights in key technological fields.

  • 03

    March 2009,Sino Nitride Semiconductor Co., Ltd established its Beijing R & D center with an area of more than 1,000 square meters.

  • 03

    March 2009,Leng Xiaoming, the deputy mayor of Dongguan, and Mai Guangqin, the secretary of the Party’s Committee of Qishi Town, visited the factory building of Sino Nitride Semiconductor Co., Ltd to inspect the progress of the factory building with high attention. In the same month, the company signed technical cooperation agreement with the Research Center for Wide Bandgap Semiconductor of PKU for worldwide joint development.

  • 01

    January 12th 2009,Sino Nitride Semiconductor Co., Ltd was officially registered and established in the key city of China’s semiconductor industry, Dongguan.

  • 2008

  • 11

    November 2008,Guangdong Guangda Group and Peking University officially signed cooperation agreement in Dongguan, Guangdong province. In the same year, the preparatory team of Sino Nitride Semiconductor Co., Ltd signed the “Investment Support Agreement” with the local government. The local government provided a series of strong support such as land and etc. and factory building with an area of more than 17,000 square meters.

  • 05

    In mid-2008,Guangdong Guangda Group and Peking University started to negotiate on this project as investors. This is the first industrialized project for semiconductor GaN substrate materials in China.

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